| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| IRF3711 | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF3711 datasheet (245K) |
| IRF3711L | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF3711L datasheet (245K) |
| IRF3711S | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A | International Rectifier | DDPak | 3 | -55°C | 150°C | IRF3711S datasheet (245K) |
| IRF3808 | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 140A | International Rectifier | N/A | 3 | -55°C | 175°C | IRF3808 datasheet (131K) |
| IRF3808L | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 106A | International Rectifier | N/A | 3 | -55°C | 175°C | IRF3808L datasheet (161K) |
| IRF3808S | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 106A | International Rectifier | DDPak | 3 | -55°C | 175°C | IRF3808S datasheet (161K) |
| IRF430 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF430 datasheet (146K) |
| IRF440 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF440 datasheet (142K) |
| IRF440 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF440 datasheet (142K) |
| IRF440 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF440 datasheet (142K) |
