| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| IRF723 | N-channel HEXFET, 350V, 2.8A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF723 datasheet (554K) |
| IRF723 | N-channel HEXFET, 350V, 2.8A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF723 datasheet (554K) |
| IRF7301 | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.050 Ohm. | International Rectifier | SO | 8 | -55°C | 150°C | IRF7301 datasheet (113K) |
| IRF7303 | Power MOSFET for fast switching applications, 30V, 4.9A | International Rectifier | SO | 8 | -55°C | 150°C | IRF7303 datasheet (111K) |
| IRF7401 | N-channel power MOSFET, 20V, 10A | International Rectifier | SO | 8 | -55°C | 150°C | IRF7401 datasheet (118K) |
| IRF7413 | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 11 mOhm @ VGS = 10V, ID = 12A. | International Rectifier | SO | 8 | -55°C | 150°C | IRF7413 datasheet (123K) |
| IRF7413A | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.0135 Ohm. | International Rectifier | SO | 8 | -55°C | 150°C | IRF7413A datasheet (116K) |
| IRF7416 | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.02 Ohm. | International Rectifier | SO | 8 | -55°C | 150°C | IRF7416 datasheet (116K) |
| IRF7451 | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.09 Ohm. ID = 3.6A | International Rectifier | SO | 8 | -55°C | 150°C | IRF7451 datasheet (209K) |
| IRF7452 | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.060 Ohm. ID = 4.5A | International Rectifier | SO | 8 | -55°C | 150°C | IRF7452 datasheet (104K) |
