| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| IRF840LCL | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF840LCL datasheet (173K) |
| IRF840LCS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International Rectifier | DDPak | 3 | -55°C | 150°C | IRF840LCS datasheet (173K) |
| IRF840S | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF840S datasheet (172K) |
| IRF841 | N-channel HEXFET, 450V, 8A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF841 datasheet (544K) |
| IRF842 | N-channel HEXFET, 500V, 7A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF842 datasheet (544K) |
| IRF9130 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF9130 datasheet (149K) |
| IRF9140 | HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF9140 datasheet (148K) |
| IRF9140 | HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF9140 datasheet (148K) |
| IRF9140 | HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF9140 datasheet (148K) |
| IRF9230 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -200V, RDS(on) = 0.80 Ohm, ID = -6.5A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF9230 datasheet (149K) |
