| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| IRG4BC15UD-L | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4BC15UD-L datasheet (210K) |
| IRG4BC15UD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | International Rectifier | DDPak | 3 | -55°C | 150°C | IRG4BC15UD-S datasheet (210K) |
| IRG4BC15UD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | International Rectifier | DDPak | 3 | -55°C | 150°C | IRG4BC15UD-S datasheet (210K) |
| IRG4BC20 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4BC20 datasheet (161K) |
| IRG4BC20FD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4BC20FD datasheet (222K) |
| IRG4BC20FD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | International Rectifier | DDPak | 3 | -55°C | 150°C | IRG4BC20FD-S datasheet (222K) |
| IRG4BC20K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4BC20K datasheet (138K) |
| IRG4BC20K-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | International Rectifier | DDPak | 3 | -55°C | 150°C | IRG4BC20K-S datasheet (162K) |
| IRG4BC20KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4BC20KD datasheet (199K) |
| IRG4BC20KD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | International Rectifier | DDPak | 3 | -55°C | 150°C | IRG4BC20KD-S datasheet (222K) |
