| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| IRG4BC30UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4BC30UD datasheet (234K) |
| IRG4BC30W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4BC30W datasheet (139K) |
| IRG4BC30W-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A | International Rectifier | DDPak | 3 | -55°C | 150°C | IRG4BC30W-S datasheet (188K) |
| IRG4BC40 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4BC40 datasheet (167K) |
| IRG4BC40K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4BC40K datasheet (156K) |
| IRG4BC40S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.32V @ VGE = 15V, IC = 31A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4BC40S datasheet (157K) |
| IRG4BC40U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4BC40U datasheet (169K) |
| IRG4BC40U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4BC40U datasheet (169K) |
| IRG4BC40W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4BC40W datasheet (129K) |
| IRG4PC30 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4PC30 datasheet (145K) |
