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International Rectifier datasheets



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IRG4RC10UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0AInternational RectifierN/A3-55°C | 150°CIRG4RC10U datasheet (131K)
IRG4RC10UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0AInternational RectifierN/A3-55°C | 150°CIRG4RC10U datasheet (131K)
IRG4RC10UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.International RectifierN/A3-55°C | 150°CIRG4RC10UD datasheet (191K)
IRG4RC10UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.International RectifierN/A3-55°C | 150°CIRG4RC10UD datasheet (191K)
IRG4RC20FInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12AInternational RectifierN/A3-55°C | 150°CIRG4RC20F datasheet (264K)
IRG4RC20FInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12AInternational RectifierN/A3-55°C | 150°CIRG4RC20F datasheet (264K)
IRGB420UInsulated gate bipolar transistorInternational RectifierN/A3-55°C | 150°CIRGB420U datasheet (253K)
IRGB420UD2Insulated gate bipolar transistorInternational RectifierN/A3-55°C | 150°CIRGB420UD2 datasheet (428K)
IRGB430UInsulated gate bipolar transistorInternational RectifierN/A3-55°C | 150°CIRGB430U datasheet (253K)
IRGB430UD2Insulated gate bipolar transistorInternational RectifierN/A3-55°C | 150°CIRGB430UD2 datasheet (425K)

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