Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
IRG4RC10U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4RC10U datasheet (131K) |
IRG4RC10U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4RC10U datasheet (131K) |
IRG4RC10UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4RC10UD datasheet (191K) |
IRG4RC10UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4RC10UD datasheet (191K) |
IRG4RC20F | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4RC20F datasheet (264K) |
IRG4RC20F | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A | International Rectifier | N/A | 3 | -55°C | 150°C | IRG4RC20F datasheet (264K) |
IRGB420U | Insulated gate bipolar transistor | International Rectifier | N/A | 3 | -55°C | 150°C | IRGB420U datasheet (253K) |
IRGB420UD2 | Insulated gate bipolar transistor | International Rectifier | N/A | 3 | -55°C | 150°C | IRGB420UD2 datasheet (428K) |
IRGB430U | Insulated gate bipolar transistor | International Rectifier | N/A | 3 | -55°C | 150°C | IRGB430U datasheet (253K) |
IRGB430UD2 | Insulated gate bipolar transistor | International Rectifier | N/A | 3 | -55°C | 150°C | IRGB430UD2 datasheet (425K) |