| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| CM1000HA-28H | 1000 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 150°C | CM1000HA-28H datasheet (54K) |
| CM1000HA-28H | 1000 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 150°C | CM1000HA-28H datasheet (54K) |
| CM100BU-12H | 100 Amp IGBT module for high power switching use insolated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 150°C | CM100BU-12H datasheet (47K) |
| CM100DU-12H | 100 Amp IGBT module for high power switching use insolated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 7 | -40°C | 150°C | CM100DU-12H datasheet (51K) |
| CM100DU-24H | 100 Amp IGBT module for high power switching use insolated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 7 | -40°C | 150°C | CM100DU-24H datasheet (45K) |
| CM100DY-12H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 7 | -40°C | 150°C | CM100DY-12H datasheet (47K) |
| CM100DY-24H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 7 | -40°C | 150°C | CM100DY-24H datasheet (48K) |
| CM100E3U-12H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 150°C | CM100E3U-12H datasheet (50K) |
| CM100E3U-24H | 100 Amp IGBT module for high power switching use insolated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 5 | -40°C | 150°C | CM100E3U-24H datasheet (44K) |
| CM100TF-12H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 19 | -40°C | 150°C | CM100TF-12H datasheet (56K) |
