| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| CM100TF-24H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 19 | -40°C | 150°C | CM100TF-24H datasheet (53K) |
| CM100TF-28H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 19 | -40°C | 150°C | CM100TF-28H datasheet (53K) |
| CM100TU-12H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 15 | -40°C | 150°C | CM100TU-12H datasheet (56K) |
| CM100TU-24F | 100A IGBT module for high power switching use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 17 | -40°C | 150°C | CM100TU-24F datasheet (80K) |
| CM100TU-24H | 100 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 15 | -40°C | 150°C | CM100TU-24H datasheet (50K) |
| CM10MD-12H | 10A IGBT module for medium power switching use, insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 21 | -40°C | 150°C | CM10MD-12H datasheet (158K) |
| CM10MD-24H | 10A IGBT module for medium power switching use, insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 21 | -40°C | 150°C | CM10MD-24H datasheet (164K) |
| CM10MD1-12H | 10A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 21 | -40°C | 150°C | CM10MD1-12H datasheet (144K) |
| CM10MD3-12H | 10A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 11 | -40°C | 150°C | CM10MD3-12H datasheet (377K) |
| CM150DU-12H | 150 Amp IGBT module for high power switching use insolated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 7 | -40°C | 150°C | CM150DU-12H datasheet (51K) |
