| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| CM200DY-12H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 7 | -40°C | 150°C | CM200DY-12H datasheet (47K) |
| CM200DY-24H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 7 | -40°C | 150°C | CM200DY-24H datasheet (49K) |
| CM200DY-28H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 7 | -40°C | 150°C | CM200DY-28H datasheet (50K) |
| CM200E3U-12H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 150°C | CM200E3U-12H datasheet (50K) |
| CM200HA-24H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 150°C | CM200HA-24H datasheet (42K) |
| CM200TU-12F | 200A IGBT module for high power switching use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 17 | -40°C | 150°C | CM200TU-12F datasheet (82K) |
| CM200TU-12H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 15 | -40°C | 150°C | CM200TU-12H datasheet (51K) |
| CM200TU-5F | 6-elements in a pack IGBT module, 200A, 250V | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 17 | -40°C | 125°C | CM200TU-5F datasheet (36K) |
| CM20MD-12H | 20A IGBT module for medium power switching use, insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 21 | -40°C | 150°C | CM20MD-12H datasheet (187K) |
| CM20MD1-12H | 20A IGBT module for medium power switching use, flat-base type, insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 11 | -40°C | 150°C | CM20MD1-12H datasheet (153K) |
