| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| CM75TF-12H | 75 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 19 | -40°C | 150°C | CM75TF-12H datasheet (56K) |
| CM75TF-24H | 75 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 19 | -40°C | 150°C | CM75TF-24H datasheet (53K) |
| CM75TF-28H | 75 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 19 | -40°C | 150°C | CM75TF-28H datasheet (53K) |
| CM75TU-12F | 75A IGBT module for high power switching use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 17 | -40°C | 150°C | CM75TU-12F datasheet (81K) |
| CM75TU-12H | 75 Amp IGBT module for high power switching use insolated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 18 | -40°C | 150°C | CM75TU-12H datasheet (56K) |
| CM75TU-24F | 75A IGBT module for high power switching use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 17 | -40°C | 150°C | CM75TU-24F datasheet (81K) |
| CM75TU-24H | 75 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 15 | -40°C | 150°C | CM75TU-24H datasheet (51K) |
| CM800HA-24H | 800 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 150°C | CM800HA-24H datasheet (50K) |
| CR02AM | 0.3A semiconductor for low power use, planar passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 125°C | CR02AM datasheet (67K) |
| CR04AM | 0.4A semiconductor for low power use, glass passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 125°C | CR04AM datasheet (75K) |
