| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| CT30TM-8 | 180A insulated gate bipolar transistor for strobe flasher use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 150°C | CT30TM-8 datasheet (25K) |
| CT30VM-8 | 180A insulated gate bipolar transistor for strobe flasher use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 150°C | CT30VM-8 datasheet (24K) |
| CT35SM-8 | 200A insulated gate bipolar transistor for strobe flasher use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 150°C | CT35SM-8 datasheet (34K) |
| CT40TMH-8 | 200A insulated gate bipolar transistor for strobe flasher use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 150°C | CT40TMH-8 datasheet (32K) |
| CT60AM-18B | 60A insulated gate bipolar transistor for resonant inverter use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 150°C | CT60AM-18B datasheet (43K) |
| CT75AM-12 | 75A insulated gate bipolar transistor for general inverter ups use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 150°C | CT75AM-12 datasheet (38K) |
| FA01215 | GaAs FET hybrid IC | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 6 | -20°C | 85°C | FA01215 datasheet (15K) |
| FA01219A | GaAs FET hybrid IC | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 8 | -20°C | 85°C | FA01219A datasheet (23K) |
| FA01220A | GaAs FET hybrid IC | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 8 | -20°C | 85°C | FA01220A datasheet (21K) |
| FA01384 | GaAs FET hybrid IC | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 8 | -20°C | 85°C | FA01384 datasheet (184K) |
