| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| 2SC4989 | NPN epitaxial planar type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 5 | N/A | N/A | 2SC4989 datasheet (134K) |
| 2SC5125 | NPN epitaxial planar type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 5 | N/A | N/A | 2SC5125 datasheet (97K) |
| 2SC5125 | NPN epitaxial planar type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 5 | N/A | N/A | 2SC5125 datasheet (97K) |
| 2SC730 | NPN epitaxial planar type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | N/A | N/A | 2SC730 datasheet (124K) |
| 2SC741 | NPN epitaxial planar type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | N/A | N/A | 2SC741 datasheet (123K) |
| 2SC908 | NPN epitaxial planar type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | N/A | N/A | 2SC908 datasheet (125K) |
| 2SK2973 | MOS FET type transistor for VHF/UHF power amplifiers | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | N/A | N/A | 2SK2973 datasheet (33K) |
| 2SK2975 | MOS FET type transistor for VHF/UHF power amplifiers | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | N/A | N/A | 2SK2975 datasheet (29K) |
| BA01202 | GaAs HBT hybrid IC | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 8 | -30°C | 95°C | BA01202 datasheet (49K) |
| BA01203 | GaAs HBT hybrid IC | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 8 | -30°C | 70°C | BA01203 datasheet (56K) |
