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| MTD2N40E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | MTD2N40E datasheet (268K) |
| MTD2N50E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | MTD2N50E datasheet (299K) |
| MTD3055EL | N-channel enhancement-mode silicon gate, 10A, 80V | Motorola | N/A | 3 | -65°C | 150°C | MTD3055EL datasheet (380K) |
| MTD3055EL1 | N-channel enhancement-mode silicon gate, 10A, 80V | Motorola | N/A | 3 | -65°C | 150°C | MTD3055EL1 datasheet (380K) |
| MTD3055V | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | MTD3055V datasheet (206K) |
| MTD3055VL | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | MTD3055VL datasheet (209K) |
| MTD3302 | HDTMOS single N-channel field effect transistor | Motorola | DPAK | 4 | -55°C | 150°C | MTD3302 datasheet (87K) |
| MTD4N20E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | MTD4N20E datasheet (268K) |
| MTD5P06E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | MTD5P06E datasheet (208K) |
| MTD5P06V | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | MTD5P06V datasheet (245K) |