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| BUP410D | IGBT with antiparallel diode | Infineon (formely Siemens) | N/A | 3 | -55°C | 150°C | BUP410D datasheet (81K) |
| BUP602D | IGBT with antiparallel diode | Infineon (formely Siemens) | N/A | 3 | -55°C | 150°C | BUP602D datasheet (106K) |
| BUP603D | IGBT with antiparallel diode | Infineon (formely Siemens) | N/A | 3 | -55°C | 150°C | BUP603D datasheet (112K) |
| BUP604 | IGBT | Infineon (formely Siemens) | N/A | 3 | -55°C | 150°C | BUP604 datasheet (145K) |
| BUZ10 | N-channel SIPMOS power transistor | Infineon (formely Siemens) | N/A | 3 | -55°C | 150°C | BUZ10 datasheet (132K) |
| BUZ100 | N-channel SIPMOS power transistor | Infineon (formely Siemens) | N/A | 3 | -55°C | 175°C | BUZ100 datasheet (185K) |
| BUZ100L | N-channel SIPMOS power transistor | Infineon (formely Siemens) | N/A | 3 | -55°C | 175°C | BUZ100L datasheet (186K) |
| BUZ100S | N-channel SIPMOS power transistor | Infineon (formely Siemens) | N/A | 3 | -55°C | 175°C | BUZ100S datasheet (126K) |
| BUZ100SL | N-channel SIPMOS power transistor | Infineon (formely Siemens) | N/A | 3 | -55°C | 175°C | BUZ100SL datasheet (123K) |
| BUZ100SL-4 | SIPMOS power transistor | Infineon (formely Siemens) | N/A | 28 | -55°C | 175°C | BUZ100SL-4 datasheet (89K) |