| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| K4E661612B-TL50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | K4E661612B-TL50 datasheet (885K) |
| K4E661612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | K4E661612B-TL60 datasheet (885K) |
| K4E661612C-TC45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | K4E661612C-TC45 datasheet (884K) |
| K4E661612C-TC50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | K4E661612C-TC50 datasheet (884K) |
| K4E661612C-TC60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | K4E661612C-TC60 datasheet (884K) |
| K4E661612C-TL45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | K4E661612C-TL45 datasheet (884K) |
| K4E661612C-TL50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | K4E661612C-TL50 datasheet (884K) |
| K4E661612C-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | K4E661612C-TL60 datasheet (884K) |
| K4F151611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung Electronic | SOJ | 42 | 0°C | 70°C | K4F151611D-J datasheet (528K) |
| K4F151611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung Electronic | N/A | 50 | 0°C | 70°C | K4F151611D-T datasheet (528K) |
