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Samsung Electronic datasheets



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K4E661612B-TL504M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low powerSamsung ElectronicTSOP II500°C | 70°CK4E661612B-TL50 datasheet (885K)
K4E661612B-TL604M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low powerSamsung ElectronicTSOP II500°C | 70°CK4E661612B-TL60 datasheet (885K)
K4E661612C-TC454M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45nsSamsung ElectronicTSOP II500°C | 70°CK4E661612C-TC45 datasheet (884K)
K4E661612C-TC504M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50nsSamsung ElectronicTSOP II500°C | 70°CK4E661612C-TC50 datasheet (884K)
K4E661612C-TC604M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60nsSamsung ElectronicTSOP II500°C | 70°CK4E661612C-TC60 datasheet (884K)
K4E661612C-TL454M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low powerSamsung ElectronicTSOP II500°C | 70°CK4E661612C-TL45 datasheet (884K)
K4E661612C-TL504M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low powerSamsung ElectronicTSOP II500°C | 70°CK4E661612C-TL50 datasheet (884K)
K4E661612C-TL604M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low powerSamsung ElectronicTSOP II500°C | 70°CK4E661612C-TL60 datasheet (884K)
K4F151611D-J1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.Samsung ElectronicSOJ420°C | 70°CK4F151611D-J datasheet (528K)
K4F151611D-T1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.Samsung ElectronicN/A500°C | 70°CK4F151611D-T datasheet (528K)

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