| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| K4F160412D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung Electronic | N/A | 26 | 0°C | 70°C | K4F160412D-F datasheet (225K) |
| K4F160412D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung Electronic | N/A | 24 | 0°C | 70°C | K4F160412D-F datasheet (225K) |
| K4F160811D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic | SOJ | 28 | 0°C | 70°C | K4F160811D-B datasheet (226K) |
| K4F160811D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic | N/A | 28 | 0°C | 70°C | K4F160811D-F datasheet (226K) |
| K4F160812D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung Electronic | SOJ | 28 | 0°C | 70°C | K4F160812D-B datasheet (226K) |
| K4F160812D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung Electronic | N/A | 28 | 0°C | 70°C | K4F160812D-F datasheet (226K) |
| K4F170411D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung Electronic | SOJ | 26 | 0°C | 70°C | K4F170411D-B datasheet (225K) |
| K4F170411D-B | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung Electronic | SOJ | 24 | 0°C | 70°C | K4F170411D-B datasheet (225K) |
| K4F170411D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung Electronic | N/A | 24 | 0°C | 70°C | K4F170411D-F datasheet (225K) |
| K4F170411D-F | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung Electronic | N/A | 26 | 0°C | 70°C | K4F170411D-F datasheet (225K) |
