| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| K4H561638B-TCA2 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2. | Samsung Electronic | N/A | 66 | 0°C | 70°C | K4H561638B-TCA2 datasheet (658K) |
| K4H561638B-TCB0 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5. | Samsung Electronic | N/A | 66 | 0°C | 70°C | K4H561638B-TCB0 datasheet (658K) |
| K4H561638B-TLA0 | 256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2. | Samsung Electronic | N/A | 66 | 0°C | 70°C | K4H561638B-TLA0 datasheet (658K) |
| K4H561638B-TLA2 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2. | Samsung Electronic | N/A | 66 | 0°C | 70°C | K4H561638B-TLA2 datasheet (658K) |
| K4H561638B-TLB0 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5. | Samsung Electronic | N/A | 66 | 0°C | 70°C | K4H561638B-TLB0 datasheet (658K) |
| K4R271669AM-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | K4R271669AM-CG6 datasheet (3M) |
| K4R271669AM-CK7 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | K4R271669AM-CK7 datasheet (3M) |
| K4R271669AM-CK8 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | K4R271669AM-CK8 datasheet (3M) |
| K4R271669AN-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. | Samsung Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | K4R271669AN-CG6 datasheet (3M) |
| K4R271669AN-CK7 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | K4R271669AN-CK7 datasheet (3M) |
