Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
K4R271669AN-CK8 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | K4R271669AN-CK8 datasheet (3M) |
K4R271669B-MCG6 | 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | K4R271669B-MCG6 datasheet (306K) |
K4R271669B-MCK7 | 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | K4R271669B-MCK7 datasheet (306K) |
K4R271669B-MCK8 | 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | K4R271669B-MCK8 datasheet (306K) |
K4R271669B-NCG6 | 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | K4R271669B-NCG6 datasheet (306K) |
K4R271669B-NCK7 | 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz | Samsung Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | K4R271669B-NCK7 datasheet (306K) |
K4R271669B-NCK8 | 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz | Samsung Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | K4R271669B-NCK8 datasheet (306K) |
K4R271869B-MCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | K4R271869B-MCG6 datasheet (306K) |
K4R271869B-MCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | K4R271869B-MCK7 datasheet (306K) |
K4R271869B-MCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | K4R271869B-MCK8 datasheet (306K) |