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Samsung Electronic datasheets



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K4R271669AN-CK8256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.Samsung ElectronicmicroBGA(normal CSP)620°C | 70°CK4R271669AN-CK8 datasheet (3M)
K4R271669B-MCG6256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.Samsung ElectronicmicroBGA(mirrored CS540°C | 100°CK4R271669B-MCG6 datasheet (306K)
K4R271669B-MCK7256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.Samsung ElectronicmicroBGA(mirrored CS540°C | 100°CK4R271669B-MCK7 datasheet (306K)
K4R271669B-MCK8256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.Samsung ElectronicmicroBGA(mirrored CS540°C | 100°CK4R271669B-MCK8 datasheet (306K)
K4R271669B-NCG6256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.Samsung ElectronicmicroBGA(normal CSP)540°C | 100°CK4R271669B-NCG6 datasheet (306K)
K4R271669B-NCK7256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHzSamsung ElectronicmicroBGA(normal CSP)540°C | 100°CK4R271669B-NCK7 datasheet (306K)
K4R271669B-NCK8256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHzSamsung ElectronicmicroBGA(normal CSP)540°C | 100°CK4R271669B-NCK8 datasheet (306K)
K4R271869B-MCG6256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.Samsung ElectronicmicroBGA(mirrored CS540°C | 100°CK4R271869B-MCG6 datasheet (306K)
K4R271869B-MCK7256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.Samsung ElectronicmicroBGA(mirrored CS540°C | 100°CK4R271869B-MCK7 datasheet (306K)
K4R271869B-MCK8256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.Samsung ElectronicmicroBGA(mirrored CS540°C | 100°CK4R271869B-MCK8 datasheet (306K)

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