| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| K4R881869M-NCK7 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung Electronic | microBGA(normal CSP) | 56 | 0°C | 100°C | K4R881869M-NCK7 datasheet (3M) |
| K4R881869M-NCK8 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung Electronic | microBGA(normal CSP) | 56 | 0°C | 100°C | K4R881869M-NCK8 datasheet (3M) |
| K4S160822DT-G/F10 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung Electronic | TSOP (II) | 44 | 0°C | 70°C | K4S160822DT-G/F10 datasheet (1M) |
| K4S160822DT-G/F7 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 143 MHz, interface LVTTL. | Samsung Electronic | TSOP (II) | 44 | 0°C | 70°C | K4S160822DT-G/F7 datasheet (1M) |
| K4S160822DT-G/F8 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 125 MHz, interface LVTTL. | Samsung Electronic | TSOP (II) | 44 | 0°C | 70°C | K4S160822DT-G/F8 datasheet (1M) |
| K4S160822DT-G/FH | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung Electronic | TSOP (II) | 44 | 0°C | 70°C | K4S160822DT-G/FH datasheet (1M) |
| K4S160822DT-G/FL | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung Electronic | TSOP (II) | 44 | 0°C | 70°C | K4S160822DT-G/FL datasheet (1M) |
| K4S161622D-TC/L10 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 100 MHz, interface LVTTL. | Samsung Electronic | TSOP (II) | 50 | 0°C | 70°C | K4S161622D-TC/L10 datasheet (1M) |
| K4S161622D-TC/L55 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 183 MHz, interface LVTTL. | Samsung Electronic | TSOP (II) | 50 | 0°C | 70°C | K4S161622D-TC/L55 datasheet (1M) |
| K4S161622D-TC/L60 | 512K x 16bit x 2 banks synchronous DRAM. Max freq. 166 MHz, interface LVTTL. | Samsung Electronic | TSOP (II) | 50 | 0°C | 70°C | K4S161622D-TC/L60 datasheet (1M) |
