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Samsung Electronic datasheets



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K4R881869M-NCK7512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.Samsung ElectronicmicroBGA(normal CSP)560°C | 100°CK4R881869M-NCK7 datasheet (3M)
K4R881869M-NCK8512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.Samsung ElectronicmicroBGA(normal CSP)560°C | 100°CK4R881869M-NCK8 datasheet (3M)
K4S160822DT-G/F101M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL.Samsung ElectronicTSOP (II)440°C | 70°CK4S160822DT-G/F10 datasheet (1M)
K4S160822DT-G/F71M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 143 MHz, interface LVTTL.Samsung ElectronicTSOP (II)440°C | 70°CK4S160822DT-G/F7 datasheet (1M)
K4S160822DT-G/F81M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 125 MHz, interface LVTTL.Samsung ElectronicTSOP (II)440°C | 70°CK4S160822DT-G/F8 datasheet (1M)
K4S160822DT-G/FH1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL.Samsung ElectronicTSOP (II)440°C | 70°CK4S160822DT-G/FH datasheet (1M)
K4S160822DT-G/FL1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL.Samsung ElectronicTSOP (II)440°C | 70°CK4S160822DT-G/FL datasheet (1M)
K4S161622D-TC/L10512K x 16bit x 2 banks synchronous DRAM. Max freq. 100 MHz, interface LVTTL.Samsung ElectronicTSOP (II)500°C | 70°CK4S161622D-TC/L10 datasheet (1M)
K4S161622D-TC/L55512K x 16bit x 2 banks synchronous DRAM. Max freq. 183 MHz, interface LVTTL.Samsung ElectronicTSOP (II)500°C | 70°CK4S161622D-TC/L55 datasheet (1M)
K4S161622D-TC/L60512K x 16bit x 2 banks synchronous DRAM. Max freq. 166 MHz, interface LVTTL.Samsung ElectronicTSOP (II)500°C | 70°CK4S161622D-TC/L60 datasheet (1M)

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