| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| K4S560832D-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung Electronic | TSOP II | 54 | 0°C | 70°C | K4S560832D-TC/L75 datasheet (118K) |
| K4S560832D-TC/L7C | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung Electronic | TSOP II | 54 | 0°C | 70°C | K4S560832D-TC/L7C datasheet (118K) |
| K4S560832E-NC75 | 32M x 8 SDRAM, LVTTL, 133MHz | Samsung Electronic | sTSOP | 54 | 0°C | 70°C | K4S560832E-NC75 datasheet (207K) |
| K4S560832E-NCL75 | 32M x 8 SDRAM, LVTTL, 133MHz | Samsung Electronic | sTSOP | 54 | 0°C | 70°C | K4S560832E-NCL75 datasheet (207K) |
| K4S560832E-TC75 | 32M x 8 SDRAM, LVTTL, 133MHz | Samsung Electronic | TSOP | 54 | 0°C | 70°C | K4S560832E-TC75 datasheet (198K) |
| K4S561632A-TC/L1H | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | K4S561632A-TC/L1H datasheet (127K) |
| K4S561632A-TC/L1L | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | K4S561632A-TC/L1L datasheet (127K) |
| K4S561632A-TC/L75 | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | K4S561632A-TC/L75 datasheet (127K) |
| K4S561632A-TC/L80 | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | K4S561632A-TC/L80 datasheet (127K) |
| K4S561632B-TC/L1H | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | K4S561632B-TC/L1H datasheet (131K) |
