| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| K4S641632D-TC/L70 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 143 MHz (CL=3), interface LVTTL. | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | K4S641632D-TC/L70 datasheet (115K) |
| K4S641632D-TC/L75 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | K4S641632D-TC/L75 datasheet (115K) |
| K4S641632D-TC/L80 | 1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | K4S641632D-TC/L80 datasheet (115K) |
| K4S641632F-TC1H | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung Electronic | TSOP II | 54 | 0°C | 70°C | K4S641632F-TC1H datasheet (133K) |
| K4S641632F-TC1H | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung Electronic | TSOP II | 54 | 0°C | 70°C | K4S641632F-TC1H datasheet (133K) |
| K4S641632F-TC1L | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung Electronic | TSOP II | 54 | 0°C | 70°C | K4S641632F-TC1L datasheet (133K) |
| K4S641632F-TC50 | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 200MHz, LVTTL interface | Samsung Electronic | TSOP II | 54 | 0°C | 70°C | K4S641632F-TC50 datasheet (133K) |
| K4S641632F-TC55 | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 183MHz, LVTTL interface | Samsung Electronic | TSOP II | 54 | 0°C | 70°C | K4S641632F-TC55 datasheet (133K) |
| K4S641632F-TC60 | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 166MHz, LVTTL interface | Samsung Electronic | TSOP II | 54 | 0°C | 70°C | K4S641632F-TC60 datasheet (133K) |
| K4S641632F-TC60 | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 166MHz, LVTTL interface | Samsung Electronic | TSOP II | 54 | 0°C | 70°C | K4S641632F-TC60 datasheet (133K) |
