Datasheets search


   Поиск по названию    Поиск по описанию

  




Поиск документации /

Samsung Electronic datasheets



Название
Описание
Производитель
Корпус
Выводы
Темп. Диапазон
Файл PDF
K4D26323RA-GC2A128Mbit DDR SDRAM, SSTL_2 interface, 350MHzSamsung ElectronicFBGA1440°C | 65°CK4D26323RA-GC2A datasheet (303K)
K4D26323RA-GC33128Mbit DDR SDRAM, SSTL_2 interface, 300MHzSamsung ElectronicFBGA1440°C | 65°CK4D26323RA-GC33 datasheet (303K)
K4D26323RA-GC36128Mbit DDR SDRAM, SSTL_2 interface, 275MHzSamsung ElectronicFBGA1440°C | 65°CK4D26323RA-GC36 datasheet (303K)
K4E151611D-J1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.Samsung ElectronicSOJ420°C | 70°CK4E151611D-J datasheet (553K)
K4E151611D-T1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.Samsung ElectronicN/A500°C | 70°CK4E151611D-T datasheet (553K)
K4E151611D-T1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.Samsung ElectronicN/A440°C | 70°CK4E151611D-T datasheet (553K)
K4E151612D-J1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.Samsung ElectronicSOJ420°C | 70°CK4E151612D-J datasheet (553K)
K4E151612D-T1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.Samsung ElectronicN/A500°C | 70°CK4E151612D-T datasheet (553K)
K4E151612D-T1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.Samsung ElectronicN/A440°C | 70°CK4E151612D-T datasheet (553K)
K4E151612D-T1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.Samsung ElectronicN/A440°C | 70°CK4E151612D-T datasheet (553K)

Страницы: [1] [2] [3] [4] [5] 6 [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20]


 © Datasheets.ru 2005-2024