| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic | SOJ | 26 | 0°C | 70°C | K4E160411D-B datasheet (256K) |
| K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic | SOJ | 24 | 0°C | 70°C | K4E160411D-B datasheet (256K) |
| K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic | N/A | 26 | 0°C | 70°C | K4E160411D-F datasheet (256K) |
| K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic | N/A | 24 | 0°C | 70°C | K4E160411D-F datasheet (256K) |
| K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung Electronic | SOJ | 26 | 0°C | 70°C | K4E160412D-B datasheet (256K) |
| K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung Electronic | SOJ | 24 | 0°C | 70°C | K4E160412D-B datasheet (256K) |
| K4E160412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung Electronic | N/A | 26 | 0°C | 70°C | K4E160412D-F datasheet (256K) |
| K4E160412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung Electronic | N/A | 24 | 0°C | 70°C | K4E160412D-F datasheet (256K) |
| K4E160811D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic | SOJ | 28 | 0°C | 70°C | K4E160811D-B datasheet (257K) |
| K4E160811D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung Electronic | N/A | 28 | 0°C | 70°C | K4E160811D-F datasheet (257K) |
