| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| K6T4008U1C-GF10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung Electronic | SOP | 32 | -40°C | 85°C | K6T4008U1C-GF10 datasheet (186K) |
| K6T4008U1C-GF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung Electronic | SOP | 32 | -40°C | 85°C | K6T4008U1C-GF70 datasheet (186K) |
| K6T4008U1C-GF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung Electronic | SOP | 32 | -40°C | 85°C | K6T4008U1C-GF85 datasheet (186K) |
| K6T4008U1C-MB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008U1C-MB10 datasheet (186K) |
| K6T4008U1C-MB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008U1C-MB70 datasheet (186K) |
| K6T4008U1C-MB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008U1C-MB85 datasheet (186K) |
| K6T4008U1C-MF10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008U1C-MF10 datasheet (186K) |
| K6T4008U1C-MF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008U1C-MF70 datasheet (186K) |
| K6T4008U1C-MF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008U1C-MF85 datasheet (186K) |
| K6T4008U1C-TB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008U1C-TB10 datasheet (186K) |
