| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| K6T4008U1C-TB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008U1C-TB70 datasheet (186K) |
| K6T4008U1C-TB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008U1C-TB85 datasheet (186K) |
| K6T4008U1C-TF10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008U1C-TF10 datasheet (186K) |
| K6T4008U1C-TF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008U1C-TF70 datasheet (186K) |
| K6T4008U1C-TF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008U1C-TF85 datasheet (186K) |
| K6T4008U1C-VB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008U1C-VB10 datasheet (186K) |
| K6T4008U1C-VB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008U1C-VB70 datasheet (186K) |
| K6T4008U1C-VB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008U1C-VB85 datasheet (186K) |
| K6T4008U1C-VF10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008U1C-VF10 datasheet (186K) |
| K6T4008U1C-VF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008U1C-VF70 datasheet (186K) |
