| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| K6T4008U1C-VF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008U1C-VF85 datasheet (186K) |
| K6T4008U1C-YB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008U1C-YB10 datasheet (186K) |
| K6T4008U1C-YB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008U1C-YB70 datasheet (186K) |
| K6T4008U1C-YB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008U1C-YB85 datasheet (186K) |
| K6T4008U1C-YF10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008U1C-YF10 datasheet (186K) |
| K6T4008U1C-YF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008U1C-YF70 datasheet (186K) |
| K6T4008U1C-YF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008U1C-YF85 datasheet (186K) |
| K6T4008V1C-GB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung Electronic | SOP | 32 | 0°C | 70°C | K6T4008V1C-GB70 datasheet (186K) |
| K6T4008V1C-GB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung Electronic | SOP | 32 | 0°C | 70°C | K6T4008V1C-GB85 datasheet (186K) |
| K6T4008V1C-GF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung Electronic | SOP | 32 | -40°C | 85°C | K6T4008V1C-GF70 datasheet (186K) |
