| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| K6T4008V1C-VB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008V1C-VB85 datasheet (186K) |
| K6T4008V1C-VF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008V1C-VF85 datasheet (186K) |
| K6T4008V1C-YB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008V1C-YB70 datasheet (186K) |
| K6T4008V1C-YF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008V1C-YF70 datasheet (186K) |
| K6T4008V1C-YF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008V1C-YF85 datasheet (186K) |
| K9F1208Q0A-DCB0 | 64M x 8 bit NAND flash memory, 1.70 - 1.95V | Samsung Electronic | TBGA | 63 | 0°C | 70°C | K9F1208Q0A-DCB0 datasheet (807K) |
| K9F1208Q0A-DIB0 | 64M x 8 bit NAND flash memory, 1.70 - 1.95V | Samsung Electronic | TBGA | 63 | -40°C | 85°C | K9F1208Q0A-DIB0 datasheet (807K) |
| K9F1208Q0A-HCB0 | 64M x 8 bit NAND flash memory, 1.70 - 1.95V | Samsung Electronic | TBGA | 63 | 0°C | 70°C | K9F1208Q0A-HCB0 datasheet (807K) |
| K9F1208U0A-DCB0 | 64M x 8 bit NAND flash memory, 2.7 - 3.6V | Samsung Electronic | TBGA | 63 | 0°C | 70°C | K9F1208U0A-DCB0 datasheet (807K) |
| K9F1208U0A-DIB0 | 64M x 8 bit NAND flash memory, 2.7 - 3.6V | Samsung Electronic | TBGA | 63 | -40°C | 85°C | K9F1208U0A-DIB0 datasheet (807K) |
