| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| K4E170811D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung Electronic | SOJ | 28 | 0°C | 70°C | K4E170811D-B datasheet (257K) |
| K4E170811D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung Electronic | N/A | 28 | 0°C | 70°C | K4E170811D-F datasheet (257K) |
| K4E170812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung Electronic | SOJ | 28 | 0°C | 70°C | K4E170812D-B datasheet (257K) |
| K4E170812D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung Electronic | N/A | 28 | 0°C | 70°C | K4E170812D-F datasheet (257K) |
| K4E171611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung Electronic | SOJ | 42 | 0°C | 70°C | K4E171611D-J datasheet (553K) |
| K4E171611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung Electronic | N/A | 50 | 0°C | 70°C | K4E171611D-T datasheet (553K) |
| K4E171611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung Electronic | N/A | 44 | 0°C | 70°C | K4E171611D-T datasheet (553K) |
| K4E171612D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung Electronic | SOJ | 42 | 0°C | 70°C | K4E171612D-J datasheet (553K) |
| K4E171612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung Electronic | N/A | 50 | 0°C | 70°C | K4E171612D-T datasheet (553K) |
| K4E171612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung Electronic | N/A | 44 | 0°C | 70°C | K4E171612D-T datasheet (553K) |
