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Wing Shing Electronic Co. - manufacturer of power semiconductors datasheets



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DB101Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS bridge input voltage 35V. Maximum DC blocking voltage 50V.Wing Shing Electronic Co. - manufacturer of power semiconductorsN/A4-65°C | 150°CDB101 datasheet (272K)
DB102Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 100V. Maximum RMS bridge input voltage 70V. Maximum DC blocking voltage 100V.Wing Shing Electronic Co. - manufacturer of power semiconductorsN/A4-65°C | 150°CDB102 datasheet (272K)
DB103Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 200V. Maximum RMS bridge input voltage 140V. Maximum DC blocking voltage 200V.Wing Shing Electronic Co. - manufacturer of power semiconductorsN/A4-65°C | 150°CDB103 datasheet (272K)
DB104Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS bridge input voltage 280V. Maximum DC blocking voltage 400V.Wing Shing Electronic Co. - manufacturer of power semiconductorsN/A4-65°C | 150°CDB104 datasheet (272K)
DB105Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS bridge input voltage 420V. Maximum DC blocking voltage 600V.Wing Shing Electronic Co. - manufacturer of power semiconductorsN/A4-65°C | 150°CDB105 datasheet (272K)
DB106Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS bridge input voltage 560V. Maximum DC blocking voltage 800V.Wing Shing Electronic Co. - manufacturer of power semiconductorsN/A4-65°C | 150°CDB106 datasheet (272K)
DB107Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS bridge input voltage 700V. Maximum DC blocking voltage 1000V.Wing Shing Electronic Co. - manufacturer of power semiconductorsN/A4-65°C | 150°CDB107 datasheet (272K)
DB3Bi-directional trigger diode. Breakdown voltage (typ) 32V. Breakdown voltage symmetry (max) 3V. Dynamic breakback voltage (min) 5V.Wing Shing Electronic Co. - manufacturer of power semiconductorsN/A2-40°C | 110°CDB3 datasheet (264K)
DB4Bi-directional trigger diode. Breakdown voltage (typ) 40V. Breakdown voltage symmetry (max) 3V. Dynamic breakback voltage (min) 5V.Wing Shing Electronic Co. - manufacturer of power semiconductorsN/A2-40°C | 110°CDB4 datasheet (264K)
DB6Bi-directional trigger diode. Breakdown voltage (typ) 60V. Breakdown voltage symmetry (max) 4V. Dynamic breakback voltage (min) 0V.Wing Shing Electronic Co. - manufacturer of power semiconductorsN/A2-40°C | 110°CDB6 datasheet (264K)

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