DB101 | Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS bridge input voltage 35V. Maximum DC blocking voltage 50V. | Wing Shing Electronic Co. - manufacturer of power semiconductors | N/A | 4 | -65°C | 150°C | DB101 datasheet (272K) |
DB102 | Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 100V. Maximum RMS bridge input voltage 70V. Maximum DC blocking voltage 100V. | Wing Shing Electronic Co. - manufacturer of power semiconductors | N/A | 4 | -65°C | 150°C | DB102 datasheet (272K) |
DB103 | Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 200V. Maximum RMS bridge input voltage 140V. Maximum DC blocking voltage 200V. | Wing Shing Electronic Co. - manufacturer of power semiconductors | N/A | 4 | -65°C | 150°C | DB103 datasheet (272K) |
DB104 | Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS bridge input voltage 280V. Maximum DC blocking voltage 400V. | Wing Shing Electronic Co. - manufacturer of power semiconductors | N/A | 4 | -65°C | 150°C | DB104 datasheet (272K) |
DB105 | Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS bridge input voltage 420V. Maximum DC blocking voltage 600V. | Wing Shing Electronic Co. - manufacturer of power semiconductors | N/A | 4 | -65°C | 150°C | DB105 datasheet (272K) |
DB106 | Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS bridge input voltage 560V. Maximum DC blocking voltage 800V. | Wing Shing Electronic Co. - manufacturer of power semiconductors | N/A | 4 | -65°C | 150°C | DB106 datasheet (272K) |
DB107 | Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS bridge input voltage 700V. Maximum DC blocking voltage 1000V. | Wing Shing Electronic Co. - manufacturer of power semiconductors | N/A | 4 | -65°C | 150°C | DB107 datasheet (272K) |
DB3 | Bi-directional trigger diode. Breakdown voltage (typ) 32V. Breakdown voltage symmetry (max) 3V. Dynamic breakback voltage (min) 5V. | Wing Shing Electronic Co. - manufacturer of power semiconductors | N/A | 2 | -40°C | 110°C | DB3 datasheet (264K) |
DB4 | Bi-directional trigger diode. Breakdown voltage (typ) 40V. Breakdown voltage symmetry (max) 3V. Dynamic breakback voltage (min) 5V. | Wing Shing Electronic Co. - manufacturer of power semiconductors | N/A | 2 | -40°C | 110°C | DB4 datasheet (264K) |
DB6 | Bi-directional trigger diode. Breakdown voltage (typ) 60V. Breakdown voltage symmetry (max) 4V. Dynamic breakback voltage (min) 0V. | Wing Shing Electronic Co. - manufacturer of power semiconductors | N/A | 2 | -40°C | 110°C | DB6 datasheet (264K) |