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1N445330 V, 150 mA, silicon epitaxial planar diodeHONEYN/A2N/A | N/A1N4453 datasheet (88K)
1N4453Stabistor DiodeMicrosemi-CorporationN/A-N/A | N/A1N4453 datasheet (82K)
1N445475 volt switching diodeCDIDIN/A2-65°C | 175°C1N4454 datasheet (33K)
1N4454Small signal switching diode. Peak reverse voltage VRM = 75 V. Maximum average rectified current IAV = 150 mA.CNELN/A2-65°C | 175°C1N4454 datasheet (47K)
1N4454High speed switching diodeDCCOMN/A2-65°C | 200°C1N4454 datasheet (180K)
1N445475V; silicon switching diode. For general purpose switching applicationsDIODSN/A2-65°C | 175°C1N4454 datasheet (49K)
1N4454 High Conductance Ultra Fast DiodeFairchild-SemiconductorSB Cerdip35N/A | N/A1N4454 datasheet (19K)
1N445475 V, 150 mA, Silicon epitaxial planar diodeGODARN/A2N/A | N/A1N4454 datasheet (23K)
1N445475 V, 150 mA, silicon epitaxial planar diodeHONEYN/A2N/A | N/A1N4454 datasheet (88K)
1N445475V ultra fast recovery rectifierMCCN/A-N/A | N/A1N4454 datasheet (111K)

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