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| 1N5401 | 100V, 3.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N5401 datasheet (39K) |
| 1N5401 | 100 V, 3.0 A silicon rectifier | ZOWIE | N/A | 2 | -65°C | 175°C | 1N5401 datasheet (47K) |
| 1N5401 | 100 V, 3.0 A silicon rectifier | ZOWIE | N/A | 2 | -65°C | 175°C | 1N5401 datasheet (47K) |
| 1N5401-T3 | 100V, 3.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N5401-T3 datasheet (39K) |
| 1N5401-TB | 100V, 3.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N5401-TB datasheet (39K) |
| 1N5401G | Glass passivated rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 3.0 A. | BYTES | N/A | 2 | -65°C | 175°C | 1N5401G datasheet (151K) |
| 1N5401G | Glass passivated rectifier | DCCOM | N/A | 2 | -65°C | 175°C | 1N5401G datasheet (411K) |
| 1N5401G | 100V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | N/A | 2 | -65°C | 150°C | 1N5401G datasheet (59K) |
| 1N5401G | 100 V, 3.0 A silicon rectifier | EIC | N/A | 2 | -65°C | 175°C | 1N5401G datasheet (16K) |
| 1N5401G | 100 V, 1 A glass passivated rectifier | FORMO | N/A | 2 | -65°C | 175°C | 1N5401G datasheet (32K) |