| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| 1N5401G | 100 V, 3 A, Glass passivated junction rectifier | GODAR | DO | 2 | -65°C | 175°C | 1N5401G datasheet (220K) |
| 1N5401G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. | JGD | N/A | 2 | -65°C | 150°C | 1N5401G datasheet (128K) |
| 1N5401G | 100V, 3.0A glass passivated rectifier | LITON | N/A | 2 | -55°C | 150°C | 1N5401G datasheet (35K) |
| 1N5401G | 100 V, 3 A, general purpose GPP diode | LRC | DO | 2 | N/A | N/A | 1N5401G datasheet (50K) |
| 1N5401G | Glass passivated junction plastic rectifier. VRRM = 100V. VRMS = 70V. VDC = 100V. Current 3.0A | RECTR | N/A | 2 | -65°C | 175°C | 1N5401G datasheet (23K) |
| 1N5401G | Glass passivated junction rerctifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 3.0 A. | SSE | N/A | 2 | -65°C | 150°C | 1N5401G datasheet (16K) |
| 1N5401GP | 100 V, 3 A glass passivated junction rectifier | FAGOR | N/A | 2 | -65°C | 175°C | 1N5401GP datasheet (39K) |
| 1N5401K | Silicon rectifier | Diotec-Elektronische | N/A | 2 | -50°C | 175°C | 1N5401K datasheet (39K) |
| 1N5402 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 3.0 A. | BYTES | N/A | 2 | -65°C | 150°C | 1N5402 datasheet (151K) |
| 1N5402 | 3 AMP plastic silicon rectifier | CALLM | N/A | 2 | -65°C | 175°C | 1N5402 datasheet (677K) |
