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1N5402200 V, 3 A general diodeLRCDO2N/A | N/A1N5402 datasheet (49K)
1N54023.0A, 200V ultra fast recovery rectifierMCCN/A-N/A | N/A1N5402 datasheet (78K)
1N5402Axial-lead standard recovery rectifierMotorolaIssue C2-65°C | 170°C1N5402 datasheet (44K)
1N5402High current plastic silicon rectifier. Max reccurent peak reverse voltage 200V. Max average forward rectified current 3.0A.PAJITN/A2-55°C | 150°C1N5402 datasheet (51K)
1N5402Silicon rectifier. VRRM = 200V. VRMS = 140V. VDC = 200V. Current 3.0ARECTRN/A2-65°C | 175°C1N5402 datasheet (23K)
1N5402200 V, 3.0 A silicon rectifierSURGEDO2-65°C | 125°C1N5402 datasheet (121K)
1N5402200 V, 3 A, high current plastic silicon rectifierTELN/A2-55°C | 150°C1N5402 datasheet (155K)
1N5402200 V, 3 A, high current plastic silicon rectifierTRSYSDO2-55°C | 150°C1N5402 datasheet (155K)
1N5402Silicon rectifier. Max recurrent peak reverse voltage 200V. Max RMS voltage 140V. Max DC blocking voltage 200V. Current 3.0AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductorsN/A2-65°C | 175°C1N5402 datasheet (278K)
1N5402200V, 3.0A silicon rectifierWTEN/A2-65°C | 125°C1N5402 datasheet (39K)

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