| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| 1N5402G | 200 V, 3.0 A silicon rectifier | EIC | N/A | 2 | -65°C | 175°C | 1N5402G datasheet (16K) |
| 1N5402G | 200 V, 1 A glass passivated rectifier | FORMO | N/A | 2 | -65°C | 175°C | 1N5402G datasheet (32K) |
| 1N5402G | 200 V, 3 A, Glass passivated junction rectifier | GODAR | DO | 2 | -65°C | 175°C | 1N5402G datasheet (220K) |
| 1N5402G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. | JGD | N/A | 2 | -65°C | 150°C | 1N5402G datasheet (128K) |
| 1N5402G | 200V, 3.0A glass passivated rectifier | LITON | N/A | 2 | -55°C | 150°C | 1N5402G datasheet (35K) |
| 1N5402G | 200 V, 3 A, general purpose GPP diode | LRC | DO | 2 | N/A | N/A | 1N5402G datasheet (50K) |
| 1N5402G | Glass passivated junction plastic rectifier. VRRM = 200V. VRMS = 140V. VDC = 200V. Current 3.0A | RECTR | N/A | 2 | -65°C | 175°C | 1N5402G datasheet (23K) |
| 1N5402G | Glass passivated junction rerctifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 3.0 A. | SSE | N/A | 2 | -65°C | 150°C | 1N5402G datasheet (16K) |
| 1N5402GP | 200 V, 3 A glass passivated junction rectifier | FAGOR | N/A | 2 | -65°C | 175°C | 1N5402GP datasheet (39K) |
| 1N5402GP | 3.0A, 200V ultra fast recovery rectifier | MCC | N/A | - | N/A | N/A | 1N5402GP datasheet (78K) |
