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1N5404-TB400V, 3.0A silicon rectifierWTEN/A2-65°C | 125°C1N5404-TB datasheet (39K)
1N5404GGlass passivated rectifier. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 3.0 A.BYTESN/A2-65°C | 175°C1N5404G datasheet (151K)
1N5404GGlass passivated rectifierDCCOMN/A2-65°C | 175°C1N5404G datasheet (411K)
1N5404G400V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage dropDIODSN/A2-65°C | 150°C1N5404G datasheet (59K)
1N5404G400 V, 3.0 A silicon rectifierEICN/A2-65°C | 175°C1N5404G datasheet (16K)
1N5404G400 V, 1 A glass passivated rectifierFORMON/A2-65°C | 175°C1N5404G datasheet (32K)
1N5404G400 V, 3 A, Glass passivated junction rectifierGODARDO2-65°C | 175°C1N5404G datasheet (220K)
1N5404G3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V.JGDN/A2-65°C | 150°C1N5404G datasheet (128K)
1N5404G400V, 3.0A glass passivated rectifierLITONN/A2-55°C | 150°C1N5404G datasheet (35K)
1N5404G600 V, 3 A, general purpose GPP diodeLRCDO2N/A | N/A1N5404G datasheet (50K)

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