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1N5405G500V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage dropDIODSN/A2-65°C | 150°C1N5405G datasheet (59K)
1N5405G500V, 3.0A glass passivated rectifierLITONN/A2-55°C | 150°C1N5405G datasheet (35K)
1N5405G800 V, 3 A, general purpose GPP diodeLRCDO2N/A | N/A1N5405G datasheet (50K)
1N5405KSilicon rectifierDiotec-ElektronischeN/A2-50°C | 175°C1N5405K datasheet (39K)
1N5406Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 3.0 A.BYTESN/A2-65°C | 150°C1N5406 datasheet (151K)
1N54063 AMP plastic silicon rectifierCALLMN/A2-65°C | 175°C1N5406 datasheet (677K)
1N5406General purpose plastic rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 3.0 A.CNELN/A2-50°C | 175°C1N5406 datasheet (159K)
1N5406Silicon rectifierDCCOMN/A2-65°C | 175°C1N5406 datasheet (412K)
1N5406Silicon rectifierDiotec-ElektronischeN/A2-50°C | 175°C1N5406 datasheet (42K)
1N5406600V; 3.0A rectifier; high current capability and low forward voltage dropDIODSN/A2-65°C | 175°C1N5406 datasheet (62K)

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