| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| 1N5406-T3 | 600V, 3.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N5406-T3 datasheet (39K) |
| 1N5406-TB | 600V, 3.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N5406-TB datasheet (39K) |
| 1N5406-TB | 600V, 3.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N5406-TB datasheet (39K) |
| 1N5406G | Glass passivated rectifier. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 3.0 A. | BYTES | N/A | 2 | -65°C | 175°C | 1N5406G datasheet (151K) |
| 1N5406G | Glass passivated rectifier | DCCOM | N/A | 2 | -65°C | 175°C | 1N5406G datasheet (411K) |
| 1N5406G | 600V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | N/A | 2 | -65°C | 150°C | 1N5406G datasheet (59K) |
| 1N5406G | 600 V, 3.0 A silicon rectifier | EIC | N/A | 2 | -65°C | 175°C | 1N5406G datasheet (16K) |
| 1N5406G | 600 V, 1 A glass passivated rectifier | FORMO | N/A | 2 | -65°C | 175°C | 1N5406G datasheet (32K) |
| 1N5406G | 600 V, 3 A, Glass passivated junction rectifier | GODAR | DO | 2 | -65°C | 175°C | 1N5406G datasheet (220K) |
| 1N5406G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. | JGD | N/A | 2 | -65°C | 150°C | 1N5406G datasheet (128K) |
