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| 1N5408 | Silicon rectifier. Max recurrent peak reverse voltage 1000V. Max RMS voltage 700V. Max DC blocking voltage 1000V. Current 3.0A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | N/A | 2 | -65°C | 175°C | 1N5408 datasheet (278K) |
| 1N5408 | 1000V, 3.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N5408 datasheet (39K) |
| 1N5408 | 1000V, 3.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N5408 datasheet (39K) |
| 1N5408 | 1000 V, 3.0 A silicon rectifier | ZOWIE | N/A | 2 | -65°C | 175°C | 1N5408 datasheet (47K) |
| 1N5408 | 1000 V, 3.0 A silicon rectifier | ZOWIE | N/A | 2 | -65°C | 175°C | 1N5408 datasheet (47K) |
| 1N5408-T3 | 1000V, 3.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N5408-T3 datasheet (39K) |
| 1N5408-T3 | 1000V, 3.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N5408-T3 datasheet (39K) |
| 1N5408-TB | 1000V, 3.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N5408-TB datasheet (39K) |
| 1N5408G | Glass passivated rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 3.0 A. | BYTES | N/A | 2 | -65°C | 175°C | 1N5408G datasheet (151K) |
| 1N5408G | Glass passivated rectifier | DCCOM | N/A | 2 | -65°C | 175°C | 1N5408G datasheet (411K) |