|
| 1N5817 | Schottky Rectifier | Microsemi-Corporation | N/A | - | N/A | N/A | 1N5817 datasheet (115K) |
| 1N5817 | 1 Ampere schottky barrier rectifier. Maximum recurrent peak reverse voltage 20V. Maximum average forward rectified current 1.0A | PAJIT | N/A | 2 | -55°C | 125°C | 1N5817 datasheet (98K) |
| 1N5817 | Schottky barrier diodes | Philips-Semiconductors | SOD81 | - | N/A | N/A | 1N5817 datasheet (37K) |
| 1N5817 | Schottky barrier rectifier. VRRM = 20V. VRMS = 14V. VDC = 20V. Current 1.0A | RECTR | N/A | 2 | -65°C | 125°C | 1N5817 datasheet (23K) |
| 1N5817 | Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 1.0 A. | SSE | N/A | 2 | -65°C | 125°C | 1N5817 datasheet (13K) |
| 1N5817 | LOW DROP POWER SCHOTTKY RECTIFIER | SGS-Thomson-Microelectronics | N/A | - | N/A | N/A | 1N5817 datasheet (61K) |
| 1N5817 | 20 V, 1.0 A schottky barrier rectifier | SURGE | DO | 2 | -50°C | 125°C | 1N5817 datasheet (66K) |
| 1N5817 | 20 V, 1 A, schottky barrier rectifier | TEL | N/A | 2 | -50°C | 125°C | 1N5817 datasheet (143K) |
| 1N5817 | 20 V, 1 A, schottky barrier rectifier | TRSYS | N/A | 2 | -50°C | 125°C | 1N5817 datasheet (143K) |
| 1N5817 | Schottky barrier rectifier. Max recurrent peak reverse voltage 20V. Max RMS voltage 14V. Max DC blocking voltage 20V. Current 1.0A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | N/A | 2 | -65°C | 125°C | 1N5817 datasheet (244K) |