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| 200HFR80MBV | Standard recovery diode | International-Rectifier | N/A | 2 | -40°C | 180°C | 200HFR80MBV datasheet (180K) |
| 200HFR80MSV | Standard recovery diode | International-Rectifier | N/A | 2 | -40°C | 180°C | 200HFR80MSV datasheet (180K) |
| 200HFR80MV | Standard recovery diode | International-Rectifier | N/A | 2 | -40°C | 180°C | 200HFR80MV datasheet (180K) |
| 200HFR80PBV | Standard recovery diode | International-Rectifier | N/A | 2 | -40°C | 180°C | 200HFR80PBV datasheet (180K) |
| 200HFR80PSV | Standard recovery diode | International-Rectifier | N/A | 2 | -40°C | 180°C | 200HFR80PSV datasheet (180K) |
| 200HFR80PV | Standard recovery diode | International-Rectifier | N/A | 2 | -40°C | 180°C | 200HFR80PV datasheet (180K) |
| 2010 | 10 W, 28 V, 2000 MHz common base transistor | GHZ | 55BT | 3 | N/A | N/A | 2010 datasheet (274K) |
| 2015M | 15 W, 28 V, 2000 MHz common base transistor | GHZ | 55NV | 3 | N/A | N/A | 2015M datasheet (196K) |
| 2017 | 28 and 48W true hermetically sealed proportionally controlled metal package heater hybrid | MIPAC | N/A | 4 | -55°C | 100°C | 2017 datasheet (115K) |
| 2020-100 | Delay 100 +/-10 ns, fixed SIP delay line Tr<1ns | DADD | SIP | 8 | -65°C | 125°C | 2020-100 datasheet (31K) |