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| 28C17AT-20/SO | 16K (2Kx8) CMOS EEPROM | Microchip-Technology-Inc- | N/A | 28 | 0°C | 70°C | 28C17AT-20/SO datasheet (67K) |
| 28C17AT-20I/L | 16K (2Kx8) CMOS EEPROM | Microchip-Technology-Inc- | PLCC32 | 32 | -40°C | 85°C | 28C17AT-20I/L datasheet (67K) |
| 28C17AT-20I/SO | 16K (2Kx8) CMOS EEPROM | Microchip-Technology-Inc- | N/A | 28 | -40°C | 85°C | 28C17AT-20I/SO datasheet (67K) |
| 28C17AT-25/L | 16K (2Kx8) CMOS EEPROM | Microchip-Technology-Inc- | PLCC32 | 32 | 0°C | 70°C | 28C17AT-25/L datasheet (67K) |
| 28C17AT-25I/L | 16K (2Kx8) CMOS EEPROM | Microchip-Technology-Inc- | PLCC32 | 32 | -40°C | 85°C | 28C17AT-25I/L datasheet (67K) |
| 28C17AT-25I/L | 16K (2Kx8) CMOS EEPROM | Microchip-Technology-Inc- | PLCC32 | 32 | -40°C | 85°C | 28C17AT-25I/L datasheet (67K) |
| 28C17AT-25I/SO | 16K (2Kx8) CMOS EEPROM | Microchip-Technology-Inc- | N/A | 28 | -40°C | 85°C | 28C17AT-25I/SO datasheet (67K) |
| 28C256AJC-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | 0°C | 70°C | 28C256AJC-1 datasheet (41K) |
| 28C256AJC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 28C256AJC-1 datasheet (41K) |
| 28C256AJC-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | 0°C | 70°C | 28C256AJC-2 datasheet (41K) |