| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| 2EZ100 | 100 V, 0.5 A, 2 W, glass passivated junction silicon zener diode | TRSYS | N/A | 2 | -55°C | 150°C | 2EZ100 datasheet (339K) |
| 2EZ100D5 | 100 V, 2 W, silicon zener diode | EIC | N/A | 2 | -55°C | 175°C | 2EZ100D5 datasheet (27K) |
| 2EZ10D5 | 10 V, 2 W, silicon zener diode | EIC | N/A | 2 | -55°C | 175°C | 2EZ10D5 datasheet (27K) |
| 2EZ11 | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 11.0 V. Test current Izt = 45.5 mA. | PAJIT | N/A | 2 | -55°C | 150°C | 2EZ11 datasheet (122K) |
| 2EZ11 | 11 V, 2 W, glass passivated junction silicon zener diode | TEL | N/A | 2 | -55°C | 150°C | 2EZ11 datasheet (339K) |
| 2EZ11 | 11 V, 1 A, 2 W, glass passivated junction silicon zener diode | TRSYS | N/A | 2 | -55°C | 150°C | 2EZ11 datasheet (339K) |
| 2EZ11 | 11 V, 1 A, 2 W, glass passivated junction silicon zener diode | TRSYS | N/A | 2 | -55°C | 150°C | 2EZ11 datasheet (339K) |
| 2EZ110 | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA. | PAJIT | N/A | 2 | -55°C | 150°C | 2EZ110 datasheet (122K) |
| 2EZ110 | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA. | PAJIT | N/A | 2 | -55°C | 150°C | 2EZ110 datasheet (122K) |
| 2EZ110 | 110 V, 2 W, glass passivated junction silicon zener diode | TEL | N/A | 2 | -55°C | 150°C | 2EZ110 datasheet (339K) |
