Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
2EZ190 | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 190.0 V. Test current Izt = 2.6 mA. | PAJIT | N/A | 2 | -55°C | 150°C | 2EZ190 datasheet (122K) |
2EZ190 | 190 V, 2 W, glass passivated junction silicon zener diode | TEL | N/A | 2 | -55°C | 150°C | 2EZ190 datasheet (339K) |
2EZ190 | 190 V, 0.5 A, 2 W, glass passivated junction silicon zener diode | TRSYS | N/A | 2 | -55°C | 150°C | 2EZ190 datasheet (339K) |
2EZ190D5 | 190 V, 2 W, silicon zener diode | EIC | N/A | 2 | -55°C | 175°C | 2EZ190D5 datasheet (27K) |
2EZ19D5 | 19 V, 2 W, silicon zener diode | EIC | N/A | 2 | -55°C | 175°C | 2EZ19D5 datasheet (27K) |
2EZ20 | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 20.0 V. Test current Izt = 25.0 mA. | PAJIT | N/A | 2 | -55°C | 150°C | 2EZ20 datasheet (122K) |
2EZ20 | 20 V, 2 W, glass passivated junction silicon zener diode | TEL | N/A | 2 | -55°C | 150°C | 2EZ20 datasheet (339K) |
2EZ20 | 20 V, 0.5 A, 2 W, glass passivated junction silicon zener diode | TRSYS | N/A | 2 | -55°C | 150°C | 2EZ20 datasheet (339K) |
2EZ200 | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 200.0 V. Test current Izt = 2.5 mA. | PAJIT | N/A | 2 | -55°C | 150°C | 2EZ200 datasheet (122K) |
2EZ200 | 200 V, 2 W, glass passivated junction silicon zener diode | TEL | N/A | 2 | -55°C | 150°C | 2EZ200 datasheet (339K) |