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| 2N3055A | Complementary silicon high-power transistor | MOSP | N/A | 2 | -65°C | 200°C | 2N3055A datasheet (193K) |
| 2N3055A | Complementary silicon high power transistor | Motorola | N/A | 2 | -65°C | 200°C | 2N3055A datasheet (235K) |
| 2N3055H | NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | USHA | N/A | 3 | -65°C | 200°C | 2N3055H datasheet (48K) |
| 2N3057 | Silicon planar epitaxial transistor | ME | N/A | 3 | -65°C | 200°C | 2N3057 datasheet (203K) |
| 2N3057 | Silicon planar epitaxial transistor | ME | N/A | 3 | -65°C | 200°C | 2N3057 datasheet (203K) |
| 2N3057 | Chip: geometry 4500; polarity PNP | SECOA | N/A | - | N/A | N/A | 2N3057 datasheet (31K) |
| 2N3057A | Chip: geometry 4500; polarity PNP | SECOA | N/A | - | N/A | N/A | 2N3057A datasheet (31K) |
| 2N3057A | Chip: 7.0V; geometry 4500; polarity NPN | SECOA | N/A | 3 | -55°C | 175°C | 2N3057A datasheet (45K) |
| 2N3107 | 800mW NPN silicon AF medium power transistor | ME | N/A | 3 | -65°C | 200°C | 2N3107 datasheet (143K) |
| 2N3108 | 800mW NPN silicon AF medium power transistor | ME | N/A | 3 | -65°C | 200°C | 2N3108 datasheet (143K) |