|
| 2N3506 | Chip: 5.0V; geometry 1506; polarity NPN | SECOA | N/A | 3 | -65°C | 200°C | 2N3506 datasheet (45K) |
| 2N3506L | Chip: geometry 1506; polarity NPN | SECOA | N/A | - | N/A | N/A | 2N3506L datasheet (31K) |
| 2N3506L | Chip: 5.0V; 3.0A; geometry 1506; polarity NPN | SECOA | N/A | 3 | -65°C | 200°C | 2N3506L datasheet (45K) |
| 2N3507 | Chip: geometry 1506; polarity NPN | SECOA | N/A | - | N/A | N/A | 2N3507 datasheet (31K) |
| 2N3507 | Chip: 5.0V; 3.0A; geometry 1506; polarity NPN | SECOA | N/A | 3 | -65°C | 200°C | 2N3507 datasheet (46K) |
| 2N3507L | Chip: 5.0V; 3.0A; geometry 1506; polarity NPN | SECOA | N/A | 3 | -65°C | 200°C | 2N3507L datasheet (45K) |
| 2N3507L | Chip: geometry 1506; polarity NPN | SECOA | N/A | - | N/A | N/A | 2N3507L datasheet (31K) |
| 2N3548 | 400mW complementary silicon AF low noise small signal transistor | ME | N/A | 3 | -65°C | 200°C | 2N3548 datasheet (147K) |
| 2N3553 | Silicon planar epitaxial overlay transistor | Philips-Semiconductors | N/A | 3 | -65°C | 200°C | 2N3553 datasheet (45K) |
| 2N3583 | 175V complementary NPN silicon power transistor | BOCA | N/A | 2 | -65°C | 200°C | 2N3583 datasheet (224K) |