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| 10A4 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 10.0 A. | BYTES | N/A | 2 | -65°C | 150°C | 10A4 datasheet (190K) |
| 10A6 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 10.0 A. | BYTES | N/A | 2 | -65°C | 150°C | 10A6 datasheet (190K) |
| 10A8 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 800 V. Maximum average forward rectified current 10.0 A. | BYTES | N/A | 2 | -65°C | 150°C | 10A8 datasheet (190K) |
| 10AM05 | 5 W, 20 V, 1000 MHz common emitter transistor | GHZ | 55CX | 3 | N/A | N/A | 10AM05 datasheet (136K) |
| 10AM11 | 11 W, 20 V, 1000 MHz common emitter transistor | GHZ | 55CX | 3 | N/A | N/A | 10AM11 datasheet (151K) |
| 10AM12 | 12 W, 20 V, 1000 MHz common emitter transistor | GHZ | 55JT | 3 | N/A | N/A | 10AM12 datasheet (37K) |
| 10B-2001 | Military-Grade 10BASE-T interface module. | ACT | Low profile surface | 16 | -40°C | 85°C | 10B-2001 datasheet (85K) |
| 10BQ015 | Schottky rectifier | International-Rectifier | SMB | 2 | -55°C | 100°C | 10BQ015 datasheet (238K) |
| 10BQ040 | Schottky rectifier | International-Rectifier | SMB | 2 | -55°C | 150°C | 10BQ040 datasheet (223K) |
| 10BQ060 | Schottky rectifier | International-Rectifier | SMB | 2 | -55°C | 150°C | 10BQ060 datasheet (209K) |