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| 1N4001ID | 50 V, rectifier | Philips-Semiconductors | SOD | 2 | -65°C | 175°C | 1N4001ID datasheet (31K) |
| 1N4001ID | Rectifier. Repetitive peak reverse voltage 50 V. | Philips-Semiconductors | SOD81 | 2 | -65°C | 175°C | 1N4001ID datasheet (44K) |
| 1N4001L | 50V; 1.0A rectifier; high current capability and low forward voltage drop | DIODS | N/A | 2 | -65°C | 175°C | 1N4001L datasheet (59K) |
| 1N4001L | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 50V. | JGD | N/A | 2 | -65°C | 150°C | 1N4001L datasheet (135K) |
| 1N4001L | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 50V. | JGD | N/A | 2 | -65°C | 150°C | 1N4001L datasheet (135K) |
| 1N4001L | 50V, 1.0A plastic silicon rectifier | LITON | N/A | 2 | -55°C | 125°C | 1N4001L datasheet (33K) |
| 1N4001S | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 1.0 A. | BYTES | N/A | 2 | -65°C | 150°C | 1N4001S datasheet (150K) |
| 1N4001S | 50 V, 1 A silicon rectifier | INVAC | N/A | 2 | -50°C | 175°C | 1N4001S datasheet (84K) |
| 1N4001S | Plastic silicon rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.0 A. | PAJIT | N/A | 2 | -55°C | 150°C | 1N4001S datasheet (53K) |
| 1N4001S | 50 V, 1 A, plastic silicon rectifier | TEL | N/A | 2 | -55°C | 150°C | 1N4001S datasheet (148K) |