| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| 1N4003L | 200V; 1.0A rectifier; high current capability and low forward voltage drop | DIODS | N/A | 2 | -65°C | 175°C | 1N4003L datasheet (59K) |
| 1N4003L | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 200V. | JGD | N/A | 2 | -65°C | 150°C | 1N4003L datasheet (135K) |
| 1N4003L | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 200V. | JGD | N/A | 2 | -65°C | 150°C | 1N4003L datasheet (135K) |
| 1N4003L | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 200V. | JGD | N/A | 2 | -65°C | 150°C | 1N4003L datasheet (135K) |
| 1N4003L | 200V, 1.0A plastic silicon rectifier | LITON | N/A | 2 | -55°C | 125°C | 1N4003L datasheet (33K) |
| 1N4003S | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 1.0 A. | BYTES | N/A | 2 | -65°C | 150°C | 1N4003S datasheet (150K) |
| 1N4003S | 200 V, 1 A silicon rectifier | INVAC | N/A | 2 | -50°C | 175°C | 1N4003S datasheet (84K) |
| 1N4003S | Plastic silicon rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. | PAJIT | N/A | 2 | -55°C | 150°C | 1N4003S datasheet (53K) |
| 1N4003S | 200 V, 1 A, plastic silicon rectifier | TEL | N/A | 2 | -55°C | 150°C | 1N4003S datasheet (148K) |
| 1N4003S | 200 V, 1 A, plastic silicon rectifier | TRSYS | N/A | 2 | -55°C | 150°C | 1N4003S datasheet (148K) |
