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| 1N4006-TB | 600V, 1.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N4006-TB datasheet (52K) |
| 1N4006-TB | 600V, 1.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N4006-TB datasheet (52K) |
| 1N4006E | 800 V, 1 A general diode | LRC | N/A | 2 | N/A | N/A | 1N4006E datasheet (48K) |
| 1N4006E | 800 V, 1.0 A silicon rectifier | ZOWIE | N/A | 2 | -65°C | 175°C | 1N4006E datasheet (45K) |
| 1N4006E | 800 V, 1.0 A silicon rectifier | ZOWIE | N/A | 2 | -65°C | 175°C | 1N4006E datasheet (45K) |
| 1N4006G | Glass passivated rectifier. Maximum recurrent peak reverse voltage 800 V. Maximum average forward rectified current 1.0 A. | BYTES | N/A | 2 | -65°C | 175°C | 1N4006G datasheet (151K) |
| 1N4006G | Glass passivated junction plastic rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 1.0 A. | CNEL | N/A | 2 | -65°C | 175°C | 1N4006G datasheet (140K) |
| 1N4006G | Glass passivated rectifier | DCCOM | N/A | 2 | -65°C | 175°C | 1N4006G datasheet (399K) |
| 1N4006G | 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | N/A | 2 | -65°C | 150°C | 1N4006G datasheet (60K) |
| 1N4006G | 800 V, 1.0 A silicon rectifier | EIC | N/A | 2 | -65°C | 175°C | 1N4006G datasheet (16K) |