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1N5407G700V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage dropDIODSN/A2-65°C | 150°C1N5407G datasheet (59K)
1N5407G800 V, 3.0 A silicon rectifierEICN/A2-65°C | 175°C1N5407G datasheet (16K)
1N5407G800 V, 1 A glass passivated rectifierFORMON/A2-65°C | 175°C1N5407G datasheet (32K)
1N5407G800 V, 3 A, Glass passivated junction rectifierGODARDO2-65°C | 175°C1N5407G datasheet (220K)
1N5407G3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V.JGDN/A2-65°C | 150°C1N5407G datasheet (128K)
1N5407G800V, 3.0A glass passivated rectifierLITONN/A2-55°C | 150°C1N5407G datasheet (35K)
1N5407GGlass passivated junction rerctifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 3.0 A.SSEN/A2-65°C | 150°C1N5407G datasheet (16K)
1N5407GP800 V, 3 A glass passivated junction rectifierFAGORN/A2-65°C | 175°C1N5407GP datasheet (39K)
1N5407GP3.0A, 800V ultra fast recovery rectifierMCCN/A-N/A | N/A1N5407GP datasheet (78K)
1N5407GP3.0A, 800V ultra fast recovery rectifierMCCN/A-N/A | N/A1N5407GP datasheet (78K)

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